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US 2016/0104798 A1Published application
Vertical-channel semiconductor device
AssigneeSK hynix Inc.
InventorSeung Hwan KIM
Life of this patent
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Abstract
A vertical-channel semiconductor device having a buried bit line is disclosed. The vertical-channel semiconductor device enables an active pillar including a vertical channel region to be separate from a substrate, couples the active pillar to the substrate using a body-tied structure, and prevents a floating body effect from occurring therein. In addition, the vertical-channel semiconductor device includes an air gap between buried bit lines to reduce parasitic capacitance between the bit lines.
Claims18
A semiconductor device comprising:
- a first active pillar and a second active pillar, each having a channel region arranged in a direction perpendicular to a major surface of a substrate;
- an insulation film defining the first active pillar and the second active pillar, and separating the first active pillar and the second active pillar from the substrate;
- a first gate disposed between the first active pillar and the second active pillar, and disposed over a lateral surface of the first active pillar;
- a second gate disposed between the first active pillar and the second active pillar, and disposed over a lateral surface of the second active pillar;
- and
- a bit line disposed below the first gate and the second gate, and coupled to and disposed between the first active pillar and the second active pillar.
3 more elements
A semiconductor device comprising:
- an active pillar being separate from a substrate;
- a gate disposed over a lateral surface of the active pillar;
- an insulation film separating the active pillar from the substrate;
- a buried bit line disposed between the insulation film and the gate, and coupled to a lower portion of the active pillar;
- and
- a body-tied structure having a pillar shape, and coupling the active pillar to the substrate.
3 more elements
A semiconductor device comprising:
- an active pillar being separate from a substrate by an insulation film;
- a gate disposed over a lateral surface of the active pillar;
- a buried bit line disposed between the insulation film and the gate and coupled to a lower portion of the active pillar;
- a body-tied structure coupling the active pillar to the substrate;
- and
- a first air-gap disposed between the body-tied structure and the active pillar.
3 more elements
Dependencies are inferred from the claim text.