Semiconductor Device and Method of Manufacturing a Semiconductor Device
AssigneeInfineon Technologies AG
InventorsMartin Poelzl, Georg Ehrentraut, Franz Hirler, Maximilian Roesch
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Abstract
A semiconductor device comprises a gate electrode in a trench in a semiconductor body. The gate electrode comprises a plurality of gate segments disposed along an extension direction of the trench, the gate segments being connected to neighboring gate segments by means of connection elements. A distance between adjacent gate segments is equal to or smaller than 0.5*L, wherein L denotes a length of each of the gate segments, the length being measured along the extension direction of the trench.
Claims16
A semiconductor device comprising a gate electrode in a trench in a semiconductor body,
- the gate electrode comprising a plurality of gate segments disposed along an extension direction of the trench, the gate segments being connected to neighboring gate segments by means of connection elements,
- wherein a distance between adjacent gate segments is equal to or smaller than 0.5*L, wherein L denotes a length of each of the gate segments, the length being measured along the extension direction of the trench.
A semiconductor device comprising a gate electrode in a trench in a semiconductor body,
- the gate electrode comprising a plurality of gate segments disposed along an extension direction of the trench, the gate segments being electrically connected to neighboring gate segments by means of connection elements,
- the semiconductor device further comprising a source region disposed at a surface of the semiconductor body adjacent to the trench, the source region comprising a plurality of source segments separated from each other and disposed along the extension direction of the trench.
A semiconductor device comprising a gate electrode and a field plate, the gate electrode and the field plate being disposed in a trench formed in a semiconductor body,
- the field plate comprising a plurality of field plate segments disposed along an extension direction of the trench, the field plate segments being electrically connected to neighboring field plate segments by means of second connection elements.
Dependencies are inferred from the claim text.