Method of forming a semiconductor device
AssigneeSemiconductor Components Industries, LLC
InventorsThierry Coffi Herve YAO, Moshe AGAM
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method of forming a semiconductor device may include forming a buried region within a semiconductor region, including forming an opening in the buried region. The method may also include forming a drift region of a second conductivity type in the semiconductor region with at least a portion of the drift region overlying a first portion of the buried region. Another portion of the method may include forming a first drain region of the second conductivity type in the drift region wherein the first drain region does not overlie the buried region.
Claims21
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
A method of forming a semiconductor device comprising:
- forming a semiconductor region overlying a bulk semiconductor substrate;
- forming a buried region of a first conductivity type in the semiconductor region;
- forming a body region of the first conductivity type in the semiconductor region and overlying a first portion of the buried region;
- forming a drift region of a second conductivity type in the semiconductor region and spaced away from the body region including forming at least a portion of the drift region to overlie a second portion of the buried region;
- and
- forming a first drain region of the second conductivity type in the drift region wherein the first drain region does not overlie the buried region.
A method of forming a semiconductor device comprising:
- forming a semiconductor region overlying a bulk semiconductor substrate;
- forming a buried region of a first conductivity type in the semiconductor region;
- forming a drift region of a second conductivity type in the semiconductor region with at least a first portion of the drift region overlying a first portion of the buried region;
- and
- forming a first drain region of the second conductivity type in the drift region wherein the first drain region does not overlie the buried region.
Dependencies are inferred from the claim text.