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US 2016/0104789 A1Published application
SONOS Type Stacks for Nonvolatile ChangeTrap Memory Devices and Methods to Form the Same
AssigneeCypress Semiconductor Corporation
InventorsHelmut Puchner, Igor Polishchuk, Sagy Charel Levy
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Abstract
A method includes forming a first oxide layer. The method further includes etching a portion of the first oxide layer using a first decoupled plasma nitridation process. The method includes forming. subsequent to the etching, a charge-trapping layer on the first oxide layer.
Claims21
1-20. (canceled)
A method comprising:
- forming a first oxide layer;
- etching a portion of the first oxide layer using a first decoupled plasma nitridation process;
- and
- forming, subsequent to the etching, a charge-trapping layer on the first oxide layer.
1 more element
A method comprising:
- forming a first oxide layer;
- performing a first decoupled plasma nitridation process on the first oxide layer to etch a portion of the first oxide layer;
- forming, subsequent to performing the first decoupled nitridation process, an oxide-rich oxy-nitride portion of a charge-trapping layer on the first oxide layer;
- and
- forming a silicon-rich oxy-nitride portion of the charge trapping layer on the oxide-rich oxy-nitride portion.
2 more elements
Dependencies are inferred from the claim text.