Methods of forming semiconductor devices including conductive contacts on source/drains

A method of forming a semiconductor device comprising:

• forming a plurality of fin-shaped channels on a substrate;
• forming a gate structure crossing over the plurality of fin-shaped channels;
• forming a source/drain adjacent a side of the gate structure, the source/drain crossing over the plurality of fin-shaped channels and being electrically connected to the plurality of fin-shaped channels;
• forming a metallic layer on an upper surface of the source/drain;
• and
• forming a conductive contact on the metallic layer opposite the source/drain, the conductive contact vertically overlapping less than all of the plurality of fin-shaped channels.

A method of forming a semiconductor device comprising:

• forming a plurality of fin-shaped channels on a substrate;
• forming a gate structure crossing over the plurality of fin-shaped channels;
• forming a source/drain adjacent a side of the gate structure, the source/drain crossing over the plurality of fin-shaped channels and being electrically connected to the plurality of fin-shaped channels;
• and
• forming a conductive contact on an upper surface of the source/drain, the conductive contact having a first length in a longitudinal direction of the source/drain that is less than a second length of the source/drain in the longitudinal direction of the source/drain.