Semiconductor device and method for fabricating the same

A semiconductor device, comprising:

• a substrate;
• and
• a first gate structure, a second gate structure, and a third gate structure on the substrate and an interlayer dielectric (ILD) layer around the first gate structure, the second gate structure, and the third gate structure, wherein the first gate structure comprises a first work function layer, the second gate structure comprises a second work function layer, the third gate structure comprises a third work function layer, and the first work function layer, the second work function layer, and the third work function layer comprise different orientation ratio.

(canceled)