Ohmic Contact to Semiconductor
AssigneeSensor Electronic Technology, Inc.
InventorsRemigijus Gaska, Michael Shur, Jinwei Yang, Alexander Dobrinsky, Maxim S. Shatalov
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Abstract
A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
Claims20
A device heterostructure comprising:
- a semiconductor layer;
- and
- an ohmic contact to the semiconductor layer, wherein the ohmic contact is formed without etching the semiconductor layer, wherein the forming includes:
- applying a masking material on a set of contact regions corresponding to the ohmic contact on a surface of the semiconductor layer;
- forming a protruded region over a set of unmasked regions of the surface of the semiconductor layer after the applying;
- forming a set of highly conductive semiconducting layers on the set of contact regions;
- and
- forming the ohmic contact on the set of highly conductive semiconducting layers after formation of the protruded region, wherein the forming the ohmic contact is performed at a processing temperature lower than a temperature range within which a quality of a material forming any one of the set of semiconductor layers in the device heterostructure is damaged.
A device comprising:
- a device heterostructure including an ohmic contact to a semiconductor layer in a set of semiconductor layers of the device heterostructure, wherein the ohmic contact includes a set of highly conductive semiconducting layers formed on a set of contact regions of the semiconductor layer, and wherein the set of highly conductive semiconducting layers are lattice matched with the semiconductor layer at an interface of the semiconductor layer and the set of highly conductive semiconducting layers.
A device comprising:
- a device heterostructure including:
- an n-type group III nitride semiconductor layer;
- and
- an ohmic contact to the n-type group III nitride semiconductor layer, wherein the ohmic contact includes a set of highly conductive group III nitride semiconducting layers, and wherein the set of highly conductive group III nitride semiconducting layers are lattice matched with the n-type group III nitride semiconductor layer at an interface of the n-type group III nitride semiconductor layer and the set of highly conductive group III nitride semiconducting layers.
Dependencies are inferred from the claim text.