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US 2016/0104783 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsSang Kee LEE, Jong Hwan KIM
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same are disclosed, which include a gate electrode material in a recess or a buried gate cell structure, a polysilicon material doped with impurities over a sidewall of a recess located over the gate electrode material, and a junction formed by an annealing or a rapid thermal annealing (RTA) process, thereby establishing a degree overlap between a gate electrode material of a buried gate and a junction.
Claims7
1-8. (canceled)
A semiconductor device comprising:
- a recess region disposed in a semiconductor substrate;
- a buried gate disposed in a lower part of the recess region;
- an insulation film disposed over a top surface of the buried gate;
- a polysilicon pattern formed over a sidewall of an upper part of the recess region;
- and
- a junction formed in the semiconductor substrate that is in contact with the polysilicon pattern.
3 more elements
14-24. (canceled)
Dependencies are inferred from the claim text.