Semiconductor Devices and Methods of Manufacturing Thereof
AssigneeInfineon Technologies AG
InventorsAnton Mauder, Hans-Joachim Schulze, Hans-Joerg Timme, Franz Hirler, Francisco Javier Santos Rodriguez
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Abstract
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
Claims31
A method of forming a semiconductor device, the method comprising:
- forming a first porous semiconductor layer over a top surface of a substrate;
- forming a first epitaxial layer over the first porous semiconductor layer;
- forming circuitry within and over the first epitaxial layer, wherein the circuitry is formed without completely oxidizing the first epitaxial layer;
- thinning the substrate from a back surface to form a thinned substrate;
- and
- dicing the substrate to form singulated chips, wherein the thinning is stopped before reaching the first porous semiconductor layer.
A method of forming a semiconductor device, the method comprising:
- forming a buffer semiconductor layer having pores or openings over a top surface of a substrate;
- and
- forming a compound semiconductor layer over the buffer semiconductor layer, wherein forming a buffer semiconductor layer comprises:
- patterning a etch mask over the substrate using a lithographic process;
- and
- using the etch mask, etching the openings in the substrate.
A semiconductor device comprising:
- a first epitaxial layer disposed within a substrate;
- circuitry disposed within and over the first epitaxial layer, the circuitry disposed proximate to a top surface of the substrate;
- and
- a first porous layer disposed on a back surface of a substrate, the back surface being opposite to the top surface, wherein the first porous layer comprises a metal silicide.
A semiconductor device comprising:
- a buffer semiconductor layer having pores or openings disposed over a top surface of a substrate;
- and
- a compound semiconductor layer disposed over the buffer semiconductor layer.
Dependencies are inferred from the claim text.