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US 2016/0104779 A1Published application
Silicon carbide device and a method for forming a silicon carbide device
AssigneeInfineon Technologies AG
InventorsRoland Rupp, Christian Hecht, Jens Konrath, Wolfgang Bergner, Hans-Joachim Schulze, Rudolf Elpelt
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Abstract
A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.
Claims16
A silicon carbide device comprising:
- a silicon carbide substrate, wherein the silicon carbide substrate comprises an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer, wherein the buried lateral silicon carbide edge termination region has a second conductivity type, wherein the buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer comprising the first conductivity type;
- an inorganic passivation layer structure laterally covering at least partly a main surface of the silicon carbide substrate;
- and
- a molding material layer adjacent to the inorganic passivation layer structure.
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A method for forming a silicon carbide device, the method comprising:
- forming a buried lateral silicon carbide edge termination region comprising a second conductivity type within an epitaxial silicon carbide layer of the silicon carbide substrate comprising a first conductivity type, wherein the buried lateral silicon carbide edge termination region is formed, so that it is covered by a silicon carbide surface layer comprising the first conductivity type;
- forming an inorganic passivation layer structure laterally covering at least partly a main surface of a silicon carbide substrate;
- and
- forming a molding material layer adjacent to the inorganic passivation layer structure.
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Dependencies are inferred from the claim text.