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US 2016/0104777 A1Published application
Zero-Dimensional Electron Devices and Methods of Fabricating the Same
OwnerYu-Chen Changinventor
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Abstract
A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin.
Claims29
A semiconductor device, comprising:
- a substrate;
- and
- doped quantum dots disposed on the substrate.
A semiconductor device, comprising:
- a substrate;
- and
- doped quantum dots disposed on the substrate;
- wherein a photoluminescence spectrum of the doped quantum dots has single peak or more than one peak at a temperature less than or equal to room temperature.
1 more element
A semiconductor device, comprising:
- a buffer layer disposed on a substrate, the buffer layer includes a group III material and a group V material;
- a group III-V material layer disposed on the buffer layer, and
- doped quantum dots embedded in the group III-V material layer, the doped quantum dots including a group III material and a group V material and being doped by a group II or group IV material.
Dependencies are inferred from the claim text.