High Mobility Devices with Anti-Punch Through Layer and Methods of Forming Same

A semiconductor device comprising:

• a first fin field effect transistor (finFET) comprising:
• a first anti-punch through (APT) layer comprising first APT dopants of a first type;
• and
• a first semiconductor layer over the first APT layer;
• a first conductive gate stack on sidewalls and a top surface of the first semiconductor layer;
• and
• first source and drain regions adjacent the first conductive gate stack;
• and
• a second finFET comprising:
• a second APT layer comprising second APT dopants of the first type and third APT dopants of a second type different than the first type;
• a second semiconductor layer over the second APT layer;
• a second conductive gate stack on sidewalls a top surface of the second semiconductor layer;
• and
• second source and drain regions adjacent the second conductive gate stack.

A method for forming a semiconductor device, the method comprising:

• forming an anti-punch through (APT) layer over a semiconductor substrate, wherein the APT layer comprises first APT dopants;
• forming a semiconductor layer over the APT layer;
• patterning the semiconductor layer and the APT layer to define a first fin extending upwards from the semiconductor substrate, wherein the first fin comprises a first APT layer portion and a first semiconductor layer portion;
• and
• forming a conductive gate stack on a top surface and a sidewall of the first semiconductor layer portion of the first fin.