Non-planar vertical dual source drift metal-oxide semiconductor (vdsmos)
AssigneeGlobalfoundries Inc.
InventorsJerome CIAVATTI, Yanxiang LIU, Vara Govindeswara Reddy VAKADA
Life of this patent
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Abstract
A non-planar lateral drift MOS device eliminates the need for a field plate extension, which reduces gate width. In one example, two sources and two comparatively small gates in a raised structure allow for two channels and a dual current with mirrored flows, each traveling into and downward through a center region of a connecting well that connects the substrate with the drain areas and shallow wells containing the source areas, the current then traveling in opposite directions within the substrate region of the connecting well toward the two drains. The source and drain areas may be separate raised structures or isolated areas of a continuous raised structure.
Claims20
A method, comprising:
- providing a non-planar semiconductor structure, the structure comprising a semiconductor substrate and at least one raised semiconductor structure coupled to the substrate, the at least one raised structure comprising alternating source and drain regions;
- creating a connecting well coupling the substrate with the alternating source and drain regions;
- creating at least one shallow well, each shallow well encompassing a source region;
- creating a source in each source region;
- and
- creating a drain in each drain region, wherein when active a current flows around each shallow well and through the connecting well in a single channel from each source to each corresponding drain.
A non-planar semiconductor device, comprising:
- a semiconductor substrate;
- at least one raised structure coupled to the substrate, the at least one raised structure comprising alternating source and drain regions;
- a connecting well coupling the substrate with the alternating source and drain regions;
- at least one shallow well, each shallow well encompassing a source region;
- a source in each source region;
- and
- a drain in each drain region, wherein when active a current flows around each shallow well and through the connecting well in a single channel from each source to each corresponding drain.
Dependencies are inferred from the claim text.