Method of making a semiconductor device using a dummy gate

A method for making a semiconductor device comprising:

• forming a fin mask layer on a semiconductor layer;
• forming a dummy gate over a portion of the fin mask layer so that portions of the fin mask layer extend outwardly therefrom;
• forming a dummy gate mask layer over the dummy gate;
• removing the portions of the fin mask layer that extend outwardly from the dummy gate using the dummy gate mask layer;
• removing upper portions of the semiconductor layer on opposite sides of the dummy gate to define source and drain recesses;
• forming source and drain regions in the source and drain recesses;
• removing the dummy gate mask layer and the dummy gate and using the underlying fin mask layer to define a plurality of fins in the semiconductor layer;
• and
• forming a gate over the plurality of fins.

A method of making a semiconductor device comprising:

• forming a fin mask layer on a semiconductor layer;
• forming a dummy gate over the fin mask layer;
• forming source and drain regions on opposite sides of the dummy gate;
• removing the dummy gate and using the underlying fin mask layer to define a plurality of fins in the semiconductor layer;
• and
• forming a gate over the plurality of fins so as not to extend past opposing first and second ends of the plurality of fins.