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US 2016/0104770 A1Published application
Profile control over a collector of a bipolar junction transistor
AssigneeGlobalfoundries Inc.
InventorsRenata Camillo-Castillo, David L. Harame, Vibhor Jain, Vikas K. Kaushal, Marwan H. Khater
Life of this patent
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Abstract
Device structures for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of sidewalls with a width between an opposite pair of the sidewalls that varies with increasing distance from the top surface of the substrate. A collector pedestal of the bipolar junction transistor is formed in the trench.
Claims11
A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
- a collector pedestal on a top surface of the substrate, the collector pedestal including a plurality of first sidewalls with a first convex curvature and a plurality of second sidewalls with a second convex curvature;
- and
- an intrinsic base on the collector pedestal.
Dependencies are inferred from the claim text.