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US 2016/0104769 A1Published application
Layered structure of a p-tfet
AssigneesImec Vzw, Katholieke Universiteit Leuven, KU LEUVEN R&D
InventorsDevin Verreck, Anne S. Verhulst
Life of this patent
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Abstract
A p-type Tunnel Field-Effect Transistor comprises a drain p-type semiconductor region, a source n-type semiconductor region, and at least one gate stack. The source n-type semiconductor region comprises a lowly doped section with a length of at least 10 nm and with a doping level of n-type dopant elements below 5×1018 at/cm3 and, in contact with the lowly doped section, a highly doped section with a length between 1 monolayer and 20 nm and with a doping level of n-type dopant elements above 5×1018 at/cm3.
Claims15
A p-type tunnel field-effect transistor comprising:
- a drain p-type semiconductor region;
- a source n-type semiconductor region comprising a lowly doped section and a highly doped section, wherein the lowly doped section has a length of at least 10 nm and a doping level of n-type dopant elements below 5×1018 at/cm3, wherein the highly doped section has a length between 1 monolayer and 20 nm and has a doping level of n-type dopant elements above 5×1018 at/cm3, and wherein the lowly doped section is in contact with the highly doped section;
- and
- at least one gate stack.
1 more element
Dependencies are inferred from the claim text.