Semiconductor devices with horizontal gate all around structure and methods of forming the same

A semiconductor device having a horizontal gate all around structure, the semiconductor device comprising:

• a substrate;
• a plurality of fins disposed on the substrate, each of the fins including a nanowire, an anti-punch through (APT) layer, and a barrier layer between the APT layer and the nanowire;
• and
• a pair of source and drain regions interconnected by the nanowires of the fins.

A method of forming a semiconductor device having a horizontal gate all around structure, the method comprising:

• providing a bulk substrate;
• forming a fin on the bulk substrate, wherein the forming a fin on the bulk substrate includes
• forming a channel layer above the bulk substrate,
• prior to the forming a channel layer above the bulk substrate, forming an anti-punch through (APT) layer in the bulk substrate,
• forming a barrier layer between the APT layer and the channel layer, and
• removing vertical sections of the channel layer, the barrier layer, the APT layer, and the bulk substrate;
• and
• forming the channel layer into a nanowire.