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US 2016/0104748 A1Published application
Memory cell array structures and methods of forming the same
AssigneeMicron Technology, Inc.
InventorsMarcello Ravasio, Samuele Sciarrillo, Roberto Somaschini, Gabriel L. Donadio
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Abstract
The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
Claims21
-20. (canceled)
An array of memory cells, comprising:
- a first stack structure;
- and
- an electrically inactive stack structure located at an edge of the first stack structure, wherein the electrically inactive stack structure is physically isolated from a conductive material to which the first stack structure is coupled.
An array of memory cells, comprising:
- a first electrically active stack structure;
- a second electrically active stack structure coupled to the first electrically active stack structure;
- a first electrically inactive stack structure;
- and
- a second electrically inactive stack structure,
- wherein the first and the second electrically inactive stack structures are physically isolated from a conductive material to which the first and the second electrically active stack structures are coupled.
3 more elements
A method of forming an array of memory cells, comprising:
- forming a material over a first dummy material stack structure to electrically inactivate the first dummy material stack structure and physically isolate the first dummy material stack structure from a conductive material to which a first electrically active stack structure is coupled.
Dependencies are inferred from the claim text.