Apparatuses and methods including memory access in cross point memory
AssigneeMicron Technology, Inc.
InventorsDerChang Kau, Gianpaolo Spadini
Life of this patent
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Abstract
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
Claims20
An apparatus comprising:
- conductive lines located in a first device level of a device and extending in a first direction;
- conductive lines located in a second device level of the device and extending in a second direction;
- a first plurality of device structures located in a third device level of the device and configured to store information, the third device level being between the first and second device levels, each device structure in the first plurality of device structures being located between one of the conductive lines extending in the first direction and one of the conductive lines extending in the second direction;
- and
- a second plurality of device structures located in the third device level, each device structure in the second plurality of device structures being located between one of the conductive lines extending in the first direction and one of the conductive lines extending in the second direction, wherein the second plurality of device structures is not configured to store information.
The apparatus of claim 30, further comprising a first material, a second material, and a third material, the first material overlying a first conductive line among the conductive lines extending in the first direction, the second material overlying a second conductive line among the conductive lines extending in the first direction, wherein a first portion of the first material is included in a first device structure in the second plurality of device structures, and a second portion of the first material is included in a second device structure in the second plurality of device structures, the third material is located between the first and second conductive lines and directly contacts the first and second material, wherein the first, second, and third materials are formed from a same material.
An apparatus comprising:
- a first plurality of conductive lines located in a first device level of a device and extending in the first direction;
- an additional conductive line located in the first device level of the device and extending in the first direction;
- a second plurality of conductive lines located in a second device level of the device and extending in a second direction, the second plurality of second conductive lines passing over the first plurality of conductive lines at a plurality of cross points and passing over the additional conductive line at a plurality of additional cross points;
- a plurality of device structures configured to operate as memory cells, each device structure of the plurality of device structures being located at a respective cross point of the plurality of cross points;
- and
- a plurality of additional device structures configured to operate as switches, each additional device structure of the plurality of additional device structures being located at a respective additional cross point of the plurality of additional cross points.
Dependencies are inferred from the claim text.