Methods of fabricating a variable resistance memory device using masking and selective removal

A method of fabricating a semiconductor device, comprising forming a semiconductor layer on a substrate;

• patterning the semiconductor layer in a first direction parallel to a top surface of the substrate to form semiconductor patterns spaced apart from each other in a second direction crossing the first direction;
• forming empty spaces between the semiconductor patterns;
• and then
• patterning the semiconductor patterns in the second direction to form an array of selection devices for a variable resistance memory device on the substrate.

A method of fabricating a semiconductor device,

• comprising:
• forming on a substrate, a plurality of semiconductor lines and insulator lines that extend along the substrate in a first direction;
• forming on the semiconductor lines and insulator lines, a plurality of mask lines that extend along the substrate in a second direction that crosses the first direction;
• removing at least portions of the insulator lines that lie beneath the plurality of mask lines;
• and then
• patterning the plurality of semiconductor lines in the second direction using the plurality of mask lines.