Method of manufacturing solid-state image pickup apparatus
AssigneeCanon Kabushiki Kaisha
InventorsTomoyuki Tezuka, Yukihiro Hayakawa
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Abstract
One or more methods of manufacturing a solid-state image pickup apparatus and one or more methods of manufacturing a light reflection member are provided herein, and one or more embodiments thereof may include forming a first insulating film and forming a photoresist pattern on the first insulating film. Furthermore, one or more embodiments of such methods may include forming an opening portion by removing the first insulating film while having the photoresist pattern serve as a mask and forming a light reflection member on a sidewall of the opening portion formed in the first insulating film.
Claims9
A method of manufacturing a solid-state image pickup apparatus, comprising:
- forming a first insulating film on a substrate that includes a photoelectric conversion portion and a gate electrode of a pixel transistor, the first insulating film covering the photoelectric conversion portion and the gate electrode of the pixel transistor;
- forming a photoresist pattern on the first insulating film;
- forming an opening portion by removing the first insulating film formed above the photoelectric conversion portion while having the photoresist pattern serve as a mask;
- forming a light reflection member on a sidewall of the opening portion formed in the first insulating film;
- forming a second insulating film on the first insulating film and the light reflection member;
- and
- forming, after the second insulating film has been formed, a contact plug that penetrates the first insulating film and the second insulating film and that is in contact with the gate electrode of the pixel transistor.
A method of manufacturing a solid-state image pickup apparatus, comprising:
- forming a first insulating film on a substrate that includes a photoelectric conversion portion and a pixel transistor, the first insulating film covering the photoelectric conversion portion and the pixel transistor;
- forming a photoresist pattern on the first insulating film;
- forming an opening portion by removing the first insulating film formed above the photoelectric conversion portion while having the photoresist pattern serve as a mask;
- forming a light reflection member on a sidewall of the opening portion formed in the first insulating film;
- forming a second insulating film on the first insulating film and the light reflection member;
- and
- forming, after the second insulating film has been formed, a contact hole so that the contact hole penetrates the first insulating film and the second insulating film, the contact hole connecting the pixel transistor and a wiring layer to each other.
Dependencies are inferred from the claim text.