Integrated imaging device for infrared radiation and method of production

An integrated imaging device, comprising:

• a substrate comprising an integrated circuit;
• a cover bonded to the substrate;
• a dielectric layer between the substrate and the cover;
• a sensor or an array of sensors;
• a cavity enclosed between the substrate and the cover;
• a surface of the substrate opposite the dielectric layer or a surface of the cover opposite the dielectric layer being provided with a structure directing incident radiation to the sensor or array of sensors;
• the sensor or the array of sensors being arranged in the cavity;
• the cavity being a vacuum or comprising a gas pressure of less than 100 Pa;
• and
• the cavity extending into the substrate and forming compartments separated by components of the integrated circuit, each sensor being arranged in or above one of the compartments.

A method of producing an integrated imaging device, comprising:

• providing a substrate with an integrated circuit, a dielectric layer and at least one metallization layer embedded in the dielectric layer, at least a surface of the dielectric layer being formed by a silicon oxide;
• arranging a sensor or an array of sensors on or above the substrate;
• forming at least one electrically conductive connection of the sensor or array of sensors to the metallization layer;
• applying a cover comprising silicon on the substrate by bonding, thus forming a cavity in which the sensor or array of sensors is arranged, the electrically conductive connection extending from the cavity into the dielectric layer;
• and
• etching a surface of the substrate opposite the dielectric layer or a surface of the cover opposite the dielectric layer to produce a structure directing incident radiation to the sensor or array of sensors.