Image sensor and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYI-TAE KIM, KYUNG-HO LEE, DONG-YOUNG JANG, SUNG-HO CHOI
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AssigneeSamsung Electronics Co., Ltd.
InventorsYI-TAE KIM, KYUNG-HO LEE, DONG-YOUNG JANG, SUNG-HO CHOI
Estimating the term…
An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.
An image sensor, comprising:
The image sensor of claim 10, wherein the color filter has an uniform thickness in the first region, and has a non-uniform thickness in the second region.
A method of manufacturing an image sensor, the method comprising:
An image sensor, comprising:
Dependencies are inferred from the claim text.