US 2016/0104734 A1 · IMAGING DEVICE

Abstract

To provide an imaging device in which incident light can be converted into an appropriate electric signal. The imaging device includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, and a fourth transistor. One of a source electrode and a drain electrode of the first transistor and one electrode of the photoelectric conversion element have an electrical connection portion in a first opening provided in an insulating layer positioned between the one of the source electrode and the drain electrode of the first transistor and the one electrode of the photoelectric conversion element. The number of the first opening is one in a region where the one of the source electrode and the drain electrode of the first transistor overlaps with the one electrode of the photoelectric conversion element.

Claims18

Dependent claims

An imaging device comprising a photoelectric conversion element, a first transistor, a second transistor, and a first insulating layer provided between the first transistor and the photoelectric conversion element,

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to an electrode of the photoelectric conversion element,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein a single electrical connection portion between the one of the source electrode and the drain electrode of the first transistor and the electrode of the photoelectric conversion element is provided in the first insulating layer,
wherein the first transistor includes an oxide semiconductor in an active layer, and
wherein drain current spectral density of the first transistor is inversely proportional to frequency.

2 more elements

An imaging device comprising a photoelectric conversion element, a first transistor, a second transistor, and a first insulating layer,

wherein the first insulating layer is over the first transistor and the second transistor,
wherein the photoelectric conversion element is over the first insulating layer,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to an electrode of the photoelectric conversion element,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein a single electrical connection portion between the one of the source electrode and the drain electrode of the first transistor and the electrode of the photoelectric conversion element is provided in the first insulating layer,
wherein the first transistor includes an oxide semiconductor in an active layer, and
wherein drain current spectral density of the first transistor is inversely proportional to frequency.

4 more elements

Dependencies are inferred from the claim text.

Imaging device

Life of this patent

Imaging device

Life of this patent

Abstract

Claims18