Back to results
US 2016/0104730 A1Published application
Photodiode insulation structure
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsNayera Ahmed, François Roy
Life of this patent
Estimating the term…
Abstract
A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.
Claims14
A method comprising:
- etching a trench in a stack of semiconductor layers;
- implanting a dopant from the trench to form a doped area of first conductivity type defining walls of the trench;
- thermally forming a first oxide layer on the trench walls;
- depositing a second oxide layer;
- depositing a silicon nitride layer;
- and
- filling the trench with a conductive material.
4 more elements
A method, comprising:
- a doped semiconductor layer of a first conductivity type on a doped semiconductor substrate of the second conductivity type;
- forming photodiodes in the doped semiconductor layer;
- forming a trench extending through the semiconductor layer and into the semiconductor substrate, the trench having walls;
- forming an insulating structure in the trench, forming the insulating structure including:
- forming a first insulating layer coating the walls of the trench;
- filling the trench with a conductive material;
- and
- forming a doped area of the second conductivity type in the substrate and surrounding the trench, the doped area being more heavily doped than the semiconductor layer.
5 more elements
A method, comprising:
- applying a zero bias voltage to a conductive material in a trench extending through a doped semiconductor layer of a first conductivity type positioned on a doped semiconductor substrate of the second conductivity type, the doped semiconductor layer including photodiodes, the trench including an insulating structure that includes a first insulating layer coating walls of the trench, the substrate including a doped area of the second conductivity type in the substrate and surrounding the trench, the doped area being more heavily doped than the semiconductor layer;
- and
- exposing the photodiodes to radiation.
Dependencies are inferred from the claim text.