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US 2016/0104729 A1Published application
Pinned photodiode with a low dark current
AssigneesSTMicroelectronics S.r.l., STMicroelectronics (Crolles 2) SAS
InventorsLaurent Favennec, Didier Dutartre, Francois Roy
Life of this patent
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Abstract
A method of manufacturing a pinned photodiode, including: forming a region of photon conversion into electric charges of a first conductivity type on a substrate of the second conductivity type; coating said region with a layer of a heavily-doped insulator of the second conductivity type; and annealing to ensure a dopant diffusion from the heavily-doped insulator layer.
Claims16
A method comprising:
- manufacturing a pinned photodiode, the manufacturing including:
- forming a conversion region of a first conductivity type on a substrate of a second conductivity type, the conversion region being configured to convert photons into electric charges;
- forming a shallow semiconductor region of the second conductivity type on the conversion region;
- coating said shallow semiconductor region with a heavily-doped insulator layer of that is doped with dopants of the second conductivity type, the shallow semiconductor region being positioned between the conversion region and the heavily-doped insulation layer;
- and
- providing a dopant diffusion from the heavily-doped insulator layer into the shallow semiconductor region.
3 more elements
A pinned photodiode, comprising:
- a conversion region of a first conductivity type formed on a substrate of a second conductivity type, the conversion region being configured to convert photons into electric charges;
- a diffusion layer of the second conductivity type formed on the conversion region;
- a shallow semiconductor region of the second conductivity type positioned between the diffusion layer and the conversion region;
- and
- a heavily-doped insulator layer that coats the diffusion layer, the heavily-doped insulator layer being of the second conductivity type.
2 more elements
A device, comprising:
- a transfer transistor;
- and
- a pinned photodiode, the pinned photodiode including:
- a conversion region of a first conductivity type formed on a substrate of a second conductivity type, the conversion region being configured to convert photons into electric charges;
- a diffusion layer of the second conductivity type formed on the conversion region;
- a shallow semiconductor region of the second conductivity type positioned between the diffusion layer and the conversion region;
- and
- a heavily-doped insulator layer that coats the diffusion layer, the heavily-doped insulator layer being of the second conductivity type.
5 more elements
Dependencies are inferred from the claim text.