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US 2016/0104726 A1Published application
Thin film transistor substrate, display apparatus including the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus
AssigneeSamsung Display Co., Ltd.
InventorsWoonghee Jeong, Joonhwa Bae, Youngki Shin, Yoonho Khang
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Abstract
Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.
Claims17
A thin film transistor substrate comprising:
- a substrate;
- a crystalline silicon layer on the substrate;
- and
- a capping layer covering the crystalline silicon layer and comprising a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.
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A method of manufacturing a thin film transistor substrate, the method comprising:
- forming an amorphous silicon layer on a substrate;
- forming a capping layer on the amorphous silicon layer, the capping layer covering the crystalline silicon layer and comprising a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness;
- and
- converting the amorphous silicon layer into a crystalline silicon layer.
1 more element
Dependencies are inferred from the claim text.