US 2016/0104724 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof; an insulating film on the semiconductor substrate; a primary wiring line connected to the first region and configured to receive a voltage from outside; a plurality of diodes connected in series on the insulating film and having a spiral shape generally centering around the first region in a plan view, the diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode; a resistor voltage divider having one end connected to another end of the series of diodes; a first connection wiring line connected to another end of the resistor voltage divider; and a second connection wiring line connected to a midpoint between the another end of the series of diodes and the another end of the resistor voltage divider.

Claims7

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof;
an insulating film on the semiconductor substrate;
a primary wiring line connected to the first region and configured to receive a voltage from outside;
a plurality of diodes connected in series on the insulating film, said series of diodes having a spiral shape generally centering around the first region in a plan view, said plurality of diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode;
a resistor voltage divider having one end connected to another end of the series of the diodes;
a first connection wiring line connected to another end of the resistor voltage divider;
and
a second connection wiring line connected to a midpoint between said another end of the series of diodes and said another end of the resistor voltage divider.

5 more elements

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof;
an insulating film provided on the semiconductor substrate;
a primary wiring line connected to the first region and configured to receive a voltage from outside;
a thin film semiconductor pattern on the insulating film, the thin film semiconductor pattern having a spiral shape generally centering around the first region in a plan view, one end of the thin film semiconductor pattern being connected to the primary wiring line;
and
a first connection wiring line connected to another end of the thin film semiconductor pattern;
wherein the thin film semiconductor pattern comprises:
a plurality of diodes connected in series from said one end of the thin film semiconductor pattern, each diode having a region of the first conductivity type and a region of the second conductivity type continuously and alternately arranged along the spiral shape;
and
a resistor voltage divider formed from an end of the series of the plurality of diodes to said another end of the thin film semiconductor pattern, and
wherein the semiconductor device further includes a second connection wiring line connected to a midpoint between said another end of the series of diodes and said another end of the thin film semiconductor pattern.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims7