Method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMitsuhiro OMURA, Kazuhito Furumoto
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes etching an etching target layer under a mask layer using a first gas. The mask layer includes a plurality of first layers, one or more second layers, and a mask hole piercing through the plurality of first layers and the one or more second layers. The method includes etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers using a second gas, and exposing a layer directly under the outermost first layer. The etching using the first gas and the etching using the second gas are repeated to form a hole in the etching target layer.
Claims20
A method for manufacturing a semiconductor device comprising:
- etching an etching target layer under a mask layer using a first gas, the mask layer including a plurality of first layers, one or more second layers including a second layer provided between adjacent first layers and having a material different from a material of the first layers, and a mask hole piercing through the plurality of first layers and the one or more second layers;
- and
- etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers using a second gas, and exposing a layer directly under the outermost first layer,
- the etching using the first gas and the etching using the second gas being repeated to form a hole in the etching target layer.
A method for manufacturing a semiconductor device comprising:
- etching an etching target layer under a mask layer using a first gas, the mask layer including a plurality of first layers, a plurality of second layers including a second layer provided between the first layers and having a material different from a material of the first layers, a first mask hole piercing through the plurality of first layers and the plurality of second layers, and a second mask hole shallower than the first mask hole;
- and
- etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers and a portion under the second mask hole in a first layer under the outermost first layer using a second gas, and exposing a second layer directly under the outermost first layer and a portion under the second mask hole in a second layer under the second layer directly under the outermost first layer,
- the etching using the first gas and the etching using the second gas being repeated to form a hole in the etching target layer under the first mask hole and not form a hole in the etching target layer under the second mask hole.
Dependencies are inferred from the claim text.