Wing-type projection between neighboring access transistors in memory devices

A flash memory device disposed on a semiconductor substrate, comprising:

• a plurality of flash memory cells arranged in rows and columns, wherein respective flash memory cells include respective access transistors coupled to respective floating gate transistors, and wherein the respective access transistors have respective access gates and wherein respective floating gate transistors have respective control gates arranged over respective floating gates;
• first and second wordlines extending substantially in parallel with one another and corresponding to first and second rows which neighbor one another, wherein the first wordline is coupled to respective access gates of respective access transistors along the first row and the second wordline is coupled to respective access gates of respective access transistors along the second row;
• and
• wherein nearest edges of the first and second wordlines include a first wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.