Passing access line structure in a memory device

A method for fabricating a memory device, the method comprising:

• forming a plurality of continuous fins on a substrate;
• forming a first insulator material over the fins;
• etching the first insulator to a first height that is less than a fm height;
• forming sections of an etch resist over adjacent pairs of the fins, the etch resist leaving exposed portions of the continuous fins, the adjacent pairs of fins separated by a saddle region;
• performing an active chop process on the exposed portion to generate segmented fins separated by exposed areas;
• forming the first insulator between the sections of the etch resist and into the exposed areas;
• etching the first insulator to a second height;
• forming a second insulator into the saddle regions;
• and
• forming a metal over the fins and the insulator material.

A memory system comprising:

• a controller to control the system;
• and
• a memory device, coupled to the controller, the memory device comprising:
• a substrate including a plurality of segmented fins, the fm segments separated by exposed areas;
• an insulator material formed around the fins and in the exposed areas, wherein the insulator material is formed to a greater height in the exposed areas than around the fins;
• and
• a metal formed over the fins and the insulator material, wherein the metal is formed to a shallower depth over the exposed areas.