Semiconductor devices having active regions at different levels
AssigneeSamsung Electronics Co., Ltd.
InventorJuyoun KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device has active regions with different conductivity types. A substrate has a PMOS region and an NMOS region. A first active region is in the PMOS region. A second active region is in the NMOS region. A semiconductor layer is on the first active region. A first gate electrode crosses the first active region and extends on the semiconductor layer. A second gate electrode is on the second active region. An upper end of the first active region extends to a level lower than an upper end of the second active region. A lower end of the first active region extends to a level lower than a lower end of the second active region.
Claims20
A semiconductor device, comprising:
- a substrate having a PMOS region and an NMOS region;
- a first active region in the PMOS region;
- a second active region in the NMOS region;
- a semiconductor layer on the first active region;
- a first gate electrode configured to cross the first active region and extend on the semiconductor layer;
- and
- a second gate electrode on the second active region,
- wherein an upper end of the first active region extends to a level lower than an upper end of the second active region, and a lower end of the first active region extends to a level lower than a lower end of the second active region.
A semiconductor device, comprising:
- a substrate having a first region and a second region which has a conductivity type different from the first region;
- a first active region in the first region;
- a second active region in the second region;
- and
- a semiconductor layer on the first active region and having impurities of the same conductivity type as the first active region,
- wherein an upper end of the first active region extends to a level lower than an upper end of the second active region, a lower end of the first active region extends to a level lower than a lower end of the second active region, and an upper end of the semiconductor layer extends to a same horizontal level as the upper end of the second active region.
A semiconductor device, comprising:
- a substrate having a face;
- a first fin on the face that protrudes away from the face, the first fin having a first fin bottom adjacent the face, a first fin top remote from the face and a first fin sidewall that extends between the first fin top and the first fin bottom;
- a second fin on the face that protrudes away from the face, the second fin having a second fin bottom adjacent the face, a second fin top remote from the face and a second fin sidewall that extends between the second fin top and the second fin bottom;
- the first fin top and the second fin top being different distances away from the face;
- and
- the first fin bottom and the second fin bottom being different distances away from the face.
Dependencies are inferred from the claim text.