Semiconductor device including finfets having different gate structures and method of manufacturing the semiconductor device

A semiconductor device comprising:

• a substrate;
• a first fin field-effect transistor (FinFET) having a triple-structure that is in a first region on the substrate;
• and
• a second FinFET having a double-gate structure that is in a second region on the substrate,
• wherein logic devices are disposed in the first region and input/output (I/O) devices are disposed in the second region,
• wherein a height of a first fin of the first FinFET relative to the substrate is greater than or equal to a height of a second fin of the second FinFET relative to the substrate.

A semiconductor device, comprising:

• a substrate comprising a logic device region including logic devices thereon and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region;
• a first fin field-effect transistor (FinFET) on the logic device region, the first FinFET comprising a first semiconductor fin protruding from the substrate and a triple-gate structure comprising a first gate dielectric layer and a first gate electrode thereon;
• and
• a second FinFET on the I/O device region, the second FinFET comprising a second semiconductor fin protruding from the substrate and a double-gate structure comprising a second gate dielectric layer and a second gate electrode thereon,
• wherein the first and second gate dielectric layers have different thicknesses.