Compact High-Voltage Semiconductor Package
AssigneeInternational Rectifier Corporation
InventorsEung San Cho, Chuan Cheah
Life of this patent
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Abstract
There are disclosed herein various implementations of a compact high-voltage semiconductor package. In one exemplary implementation, such a semiconductor package includes a power transistor, as well as a drain contact, a source contact, and a gate contact to provide external connections to the power transistor. The semiconductor package also includes a contour element formed between the drain contact and the source contact in the semiconductor package. The contour element increases a creepage distance between the drain contact and the source contact in the semiconductor package so as to increase a breakdown voltage of the semiconductor package.
Claims20
A semiconductor package comprising:
- a power transistor;
- a drain contact, a source contact, and a gate contact to provide external connections to said power transistor;
- a contour element formed between said drain contact and said source contact in said semiconductor package;
- said contour element increasing a creepage distance between said drain contact and said source contact in said semiconductor package so as to increase a breakdown voltage of said semiconductor package.
A semiconductor package comprising:
- first and second power transistors;
- first and second drain contacts, first and second source contacts, and first and second gate contacts to provide respective external connections to said first and second power transistors;
- a first contour element formed between said first drain contact and said first source contact in said semiconductor package;
- a second contour element formed between said second drain contact and said second source contact in said semiconductor package;
- said first contour element increasing a first creepage distance between said first drain contact and said first source contact in said semiconductor package so as to increase a breakdown voltage of said semiconductor package;
- said second contour element increasing a second creepage distance between said second drain contact and said second source contact in said semiconductor package so as to increase said breakdown voltage of said semiconductor package.
A composite semiconductor package comprising:
- a first semiconductor package housing a first power transistor joined with a second semiconductor package housing a second power transistor;
- a first contour element formed between a first drain contact and a first source contact in said first semiconductor package;
- a second contour element formed adjacent a second drain contact in said second semiconductor package;
- said first contour element increasing a first creepage distance between said first drain contact and said first source contact in said first semiconductor package so as to increase a breakdown voltage of said composite semiconductor package;
- said second contour element increasing a second creepage distance in said second semiconductor package so as to increase said breakdown voltage of said composite semiconductor package;
- said first contour element interfacing with and mechanically engaging said second contour element.
Dependencies are inferred from the claim text.