Interconnect structures with intermetallic palladium joints and associated systems and methods

A method of forming an interconnect structure, comprising:

• forming a first conductive element on a first die;
• forming a second conductive element on a second die;
• disposing a conductive film on one of the first or second conductive elements, wherein the conductive film includes a surface and a plurality of heterogeneous nucleation sites at the surface;
• arranging the first and second dies such that the conductive film is between the first and second conductive elements;
• and
• growing a plurality of intermetallic features at the nucleation sites, wherein individual ones of the intermetallic features form a conductive bond between the first conductive element and the second conductive element.

A method of manufacturing a semiconductor device, comprising:

• depositing a first conductive material on a plurality of first conductive elements of a first semiconductor die;
• depositing a second conductive material on a plurality of second conductive elements of a second semiconductor die;
• forming a film of conductive material on the second conductive material, wherein the film comprises palladium;
• and
• thermally compressing metal solder between the first conductive material and the second conductive material to form a conductive joint having plurality of intermetallic features, wherein each of the intermetallic features directly contact the first conductive material and the second conductive material.

An interconnect structure, comprising:

• a first conductive element;
• a second conductive element;
• and
• an intermetallic palladium joint having a first end portion directly coupled to the first conductive element and a second end portion directly coupled to the second conductive element, wherein the first and second end portions define a bond line thickness of the intermetallic palladium joint.

A semiconductor device, comprising:

• a first semiconductor die;
• a second semiconductor die adjacent the first semiconductor die;
• and
• a plurality of interconnect structures between the first and second semiconductor dies,
• wherein each of the interconnect structures includes—
• a first conductive element,
• a second conductive element, and
• an intermetallic palladium joint between the first conductive element and the second conductive element, wherein the intermetallic joint includes a plurality of intermetallic features that each form a conductive bond between the first conductive element and the second conductive element.