Semiconductor devices and methods of manufacturing the same

A semiconductor device, comprising:

• a first gate structure including a first gate electrode and a first hard mask in a sequentially stacked configuration on a substrate, the first gate structure having a first end portion at which the first gate structure is exposed by the first hard mask;
• a second gate structure including a second gate electrode and a second hard mask in a sequentially stacked configuration on the substrate and being spaced apart from the first gate structure, the second gate structure having a second end portion where the second gate structure is exposed by the second hard mask, the second end portion of the second gate structure being opposite to the first end portion of the first gate structure in a diagonal direction;
• a cross-coupling pattern between the first and second gate structures, the cross-coupling pattern contacting sidewalls of the first and second gate electrodes and electrically connecting the first and second gate structures to each other;
• a first contact plug directly contacting a sidewall of the first hard mask, a top surface of the first gate electrode, and a first upper sidewall of the cross-coupling pattern;
• and
• a second contact plug directly contacting a sidewall of the second hard mask, a top surface of the second gate electrode, and a second upper sidewall of the cross-coupling pattern.

A semiconductor device, comprising:

• a first gate and a second gate on a substrate;
• a cross-coupling pattern having first sidewalls and second sidewalls, the cross-coupling pattern being between the first and second gates, the first sidewalls of the cross-coupling pattern being in contact with corresponding sidewalls of the first and second gates;
• a first contact plug in contact with one of the second sidewalls of the cross-coupling pattern;
• a second contact plug in contact with another of the second sidewalls of the cross-coupling pattern;
• the first contact plug overlapping at least a portion of the first gate and one of the first sidewalls of the cross-coupling pattern;
• the second contact plug overlapping at least a portion of the second gate and another of the first sidewalls of the cross-coupling pattern;
• and
• a surface of the cross-coupling pattern being substantially co-planar with surfaces of the first and second contact plugs.