Metallisation for semiconductor device
AssigneeNXP B.V.
InventorsPaul Huiskamp, Godfried Henricus Josephus Notermans
Life of this patent
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Abstract
The present disclosure relates to a semiconductor device comprising a metallisation stack. The metallisation stack may include a first metallisation layer and a second metallisation layer. The first metallisation layer may be electrically connected to the second metallisation layer by a two or more stacked inter-metal vias.
Claims15
A semiconductor device comprising a metallisation stack, the metallisation stack comprising:
- a first metallisation layer and a second metallisation layer, wherein the first metallisation layer is electrically connected to the second metallisation layer by a plurality of stacked inter-metal vias.
The semiconductor device of any preceding claim, wherein a vertical thickness of the first metallisation layer is less than a vertical thickness the second metallisation layer.
The method of manufacturing a semiconductor device having a metallisation stack, the method comprising:
- forming a first metallisation layer and a second metallisation layer and contacting the first metallisation layer to the second metallisation layer by a plurality of stacked inter-metal vias such that the first metallisation layer is electrically contacted to the second metallisation layer by the plurality of stacked inter-metal vias.
Dependencies are inferred from the claim text.