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US 2016/0104670 A1Published application
Interlayer ballistic conductor signal lines
AssigneeGlobalfoundries Inc.
InventorsRoderick A. Augur, Christian Witt
Life of this patent
Estimating the term…
Abstract
A method includes forming a ballistic conductor line above a first metallization layer. A dielectric layer is formed above the ballistic conductor line. A first via is embedded in the dielectric layer contacting a first portion of the ballistic conductor line. A second via is embedded in the dielectric layer contacting a second portion of the ballistic conductor line to define a signal path between the first and second vias through the ballistic conductor line.
Claims20
A method, comprising:
- forming a ballistic conductor line above a first metallization layer;
- forming a dielectric layer above said ballistic conductor line;
- embedding a first via in said dielectric layer contacting a first portion of said ballistic conductor line;
- and
- embedding a second via in said dielectric layer contacting a second portion of said ballistic conductor line to define a signal path between said first and second vias through said ballistic conductor line.
2 more elements
A device, comprising:
- a dielectric layer;
- a ballistic conductor line embedded in said dielectric layer;
- a first via embedded in said dielectric layer and contacting a first portion of said ballistic conductor line;
- and
- a second via embedded in said dielectric layer and contacting a second portion of said ballistic conductor line to define a signal path between said first and second vias through said ballistic conductor line.
2 more elements
Dependencies are inferred from the claim text.