Semiconductor structure with improved metallization adhesion and method for manufacturing the same
AssigneeInfineon Technologies AG
InventorAlim Karmous
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Abstract
A semiconductor structure is disclosed. The semiconductor structure may include a substrate, a first layer formed on a first side of the substrate and second layer formed over the first layer. The second layer may include a plurality of substantially pointed structures which interpenetrate through the first layer and extend into the substrate. A method for manufacturing a semiconductor structure is likewise disclosed.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a first layer formed on a first side of the substrate;
- and
- a second layer formed over the first layer;
- the second layer comprising a plurality of substantially pointed structures which interpenetrate through the first layer and extend into the substrate.
A semiconductor structure, comprising:
- a substrate;
- a first conductive layer formed over a first side of the substrate;
- a second conductive layer formed over the first conductive layer;
- a plurality of perforations in the first conductive layer;
- and
- a plurality of recesses in the substrate arranged to be coaxial with the plurality of perforations;
- wherein the second conductive layer comprises a plurality of post-like structures which each extend through a perforation from said plurality and are coupled to a surface of a recess from said plurality.
A method of forming a semiconductor structure, the method comprising:
- providing a substrate;
- depositing a first conductive layer on a first side of the substrate;
- depositing a second conductive layer over the first conductive layer;
- and
- shaping the second conductive layer to comprise a plurality of substantially pointed structures which interpenetrate through the first conductive layer and extend into the substrate.
A method of forming a semiconductor structure, the method comprising:
- providing a substrate;
- forming a first conductive layer over a first side of the substrate;
- forming a second conductive layer over the first conductive layer;
- opening a plurality of perforations in the first conductive layer;
- and
- creating a plurality of recesses in the substrate and arranging said recesses to be coaxial with the plurality of perforations.
Dependencies are inferred from the claim text.