A semiconductor package of a flipped mosfet

A semiconductor package comprising:

• a die paddle comprising a first base, a second base and a lead base arranged near the first base and separated from the first base;
• a plurality of grooves are formed on a top surface of the first base and a top surface of the second base, wherein the grooves arranged on the top surface of the first base divide the top surface of the first base into multiple areas comprising a plurality of first connecting areas and the grooves arranged on the top surface of the second base divide the top surface of the second base into multiple areas comprising at least a second connecting area;
• and
• a semiconductor chip flipped and connected on the first base and the second base, wherein the semiconductor chip comprises a first electrode and a second electrode formed on a front surface of the semiconductor chip with the first electrode connected to the first connecting areas and the second electrode connected to the second connecting area.