Power semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsShinsuke ASADA, Naoki YOSHIMATSU, Yuji IMOTO, Yusuke ISHIYAMA, Junji FUJINO
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AssigneeMitsubishi Electric Corporation
InventorsShinsuke ASADA, Naoki YOSHIMATSU, Yuji IMOTO, Yusuke ISHIYAMA, Junji FUJINO
Estimating the term…
A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.
A power semiconductor device comprising:
Dependencies are inferred from the claim text.