Method for processing a carrier
AssigneeInfineon Technologies AG
InventorsGuenther Ruhl, Klemens Pruegl
Life of this patent
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Abstract
According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.
Claims20
A method for processing a carrier, the method comprising:
- co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer;
- forming a second layer over the first layer, the second layer comprising a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal;
- and
- forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.
A method for processing a carrier, the method comprising:
- forming a first layer over a surface of the carrier, the first layer comprising at least one metal and carbon;
- forming a second layer over the first layer, the second layer comprising a diffusion barrier material, wherein a solubility of carbon in the diffusion barrier material is less than in the at least one metal of the first layer;
- forming a third layer over the second layer, the third layer comprising at least one metal, wherein the at least one metal of the first layer, the at least one metal of the third layer, and the diffusion barrier material are selected so that an alloy can be formed from the at least one metal of the first layer, from the at least one metal of the third layer, and from the diffusion barrier material;
- and
- forming a graphene layer at the surface of the carrier from the first layer and forming an alloy layer over the graphene layer from the at least one metal of the first layer, from the at least one metal of the third layer, and from the diffusion bather material by a temperature treatment.
A method for processing a carrier, the method comprising:
- forming a first layer over a surface of the carrier, the first layer comprising at least one metal and carbon;
- forming a second layer over the first layer, the second layer comprising a diffusion bather material, wherein the solubility of carbon in the diffusion bather material is less than in the at least one metal;
- wherein the at least one metal of the first layer and the diffusion bather material are selected so that an alloy can be formed from the at least one metal of the first layer and from the diffusion barrier material;
- forming a graphene layer at the surface of the carrier from the first layer and forming an alloy layer over the graphene layer from the at least one metal of the first layer and from the diffusion bather material by a temperature treatment;
- and
- patterning the alloy layer to form a plurality of electrical contacts on the graphene layer.
Dependencies are inferred from the claim text.