Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first interlayer insulating film over a semiconductor substrate;
• forming an etching stopper film containing Si and C over the first interlayer insulating film;
• forming an inorganic insulating film not containing C over the etching stopper film;
• forming a resist film over the inorganic insulating film;
• selectively etching the etching stopper film and the inorganic insulating film by using the resist film as a mask to form a first opening in the etching stopper film and to form a second opening that overlaps with the first opening in the inorganic insulating film;
• removing the resist film by O2 plasma asking;
• forming a second interlayer insulating film over the inorganic insulating film;
• and
• etching the second interlayer insulating film to form a wiring groove that is coupled to the second opening, and etching a portion located under the first opening of the first interlayer insulating film to form a via hole.