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US 2016/0104627 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsJhen-Cyuan Li, Shui-Yen Lu
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure.
Claims16
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a fin-shaped structure on the substrate;
- forming a cap layer on the fin-shaped structure;
- removing part of the cap layer on top of the fin-shaped structure;
- removing part of the fin-shaped structure;
- removing the remaining cap layer;
- and
- removing part of the remaining fin-shaped structure.
5 more elements
A semiconductor device, comprising:
- a substrate;
- and
- a fin-shaped structure having a top portion and a bottom portion on the substrate, wherein the top surface of the bottom portion is greater than the bottom surface of the top portion.
Dependencies are inferred from the claim text.