Methods For Depositing Fluorine/Carbon-Free Conformal Tungsten
AssigneeApplied Materials, Inc.
InventorsXinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
Life of this patent
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Abstract
Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
Claims18
A processing method comprising:
- positioning a substrate in a processing chamber comprising a gas distribution assembly including a plurality of elongate gas ports including a first reactive gas port and second reactive gas port, the first reactive gas port in fluid communication with a first reactive gas comprising a tungsten-containing compound with the empirical formula WCl5 or WCl6 and the second reactive gas port in fluid communication with a second reactive gas comprising hydrogen, the gas distribution assembly flowing both the first reactive gas and the second reactive gas into the processing chamber simultaneously;
- passing the second reactive gas across a heating element to generate hydrogen radicals in the second reactive gas;
- and
- sequentially exposing at least a portion of the substrate to the first reactive gas and the hydrogen radicals in the second reactive gas to form a tungsten film on the substrate.
A processing method comprising sequentially exposing at least a portion of substrate in a processing chamber to a first reactive gas comprising a tungsten-containing compound having the empirical formula WCl5 or WCl6 and a second reactive gas comprising hydrogen radicals to form a tungsten-containing film, wherein the first reactive gas and the second reactive gas are flowed into the processing chamber at the same time, the first reactive gas and the second reactive gas are flowed into the processing chamber through a gas distribution assembly comprising adjacent elongate gas ports, the first reactive gas and the second reactive gas flowing through different elongate gas ports being separated by at least one of a purge gas port and a vacuum port.
Dependencies are inferred from the claim text.