Method for Manufacturing a Semiconductor Wafer, and Semiconductor Device Having a Low Concentration of Interstitial Oxygen

A method for manufacturing a substrate wafer, the method comprising:

• determining the resistivity distribution of one or more monocrystalline ingots of a semiconductor material, wherein the ingot is particularly a CZ ingot or an MCZ ingot;
• selecting at least a first region of the one or more monocrystalline ingots having a resistivity within a given resistivity range;
• selecting at least a second region of the one or more monocrystalline ingots having a resistivity outside a given resistivity range;
• slicing the first region to form at least a first semiconductor wafer;
• slicing the second region to form at least a second semiconductor wafer;
• bonding the first semiconductor wafer to the second semiconductor wafer.

A semiconductor device, comprising:

• a semiconductor substrate, particularly a monocrystalline silicon substrate, having a first side, a second side opposite the first side, and a thickness;
• at least one semiconductor component integrated in the semiconductor substrate;
• a first metallization at the first side of the semiconductor substrate;
• a second metallization at the second side of the semiconductor substrate;
• wherein the semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side, wherein the global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.