Semiconductor device having common contact and gate properties
AssigneeGlobalfoundries Inc.
InventorHui ZANG
Life of this patent
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Abstract
In one aspect there is set forth herein a semiconductor device wherein a contact conductive layer and a gate conductive layer include a common conductive material. In one aspect a source/drain region contact conductive layer of an nFET, and a gate conductive layer of a gate of the nFET can be fabricated to include an n material. In one aspect a source/drain region contact conductive layer of a pFET, and a gate conductive layer of the pFET can be fabricated to include an p material.
Claims28
A semiconductor device comprising:
- a first field effect transistor (FET) having a source/drain region and a first gate formed on a substrate;
- wherein a contact conductive layer of a contact for the source/drain region and a gate conductive layer of the first gate are of a first common conductive material,
- wherein the semiconductor device includes a second FET having a source/drain region and a second gate, wherein a contact conductive layer of a contact for the source/drain region of the second FET, and a gate conductive layer of the second gate, and are of a second common conductive material.
(canceled)
(canceled)
A method for fabricating a semiconductor device, said method comprising:
- forming for a first field effect transistor (FET) a source/drain region;
- and
- depositing a contact conductive layer of a contact for the source/drain region and a gate conductive layer of a gate for the FET, wherein the contact conductive layer and the gate conductive layer are of a first common material, wherein the contact conductive layer and the gate conductive layer are commonly deposited, the contact conductive layer and the gate conductive layer being of a common deposition layer, and wherein the first common material is a material selected from the group consisting of nitride material and carbide material.
(canceled)
A semiconductor device comprising:
- a first field effect transistor (FET) having a source/drain region and a first gate formed on a substrate;
- wherein a contact conductive layer of a contact for the source/drain region and a gate conductive layer of the first gate are of a first common conductive material,
- wherein the semiconductor device includes a second FET having a source/drain region and a second gate, wherein a contact conductive layer of a contact for the source/drain region of the second FET is formed of a material that is absent from the second gate.
Dependencies are inferred from the claim text.