Preparation method for crystalline silicon thin film based on layer transfer

A preparation method of a crystalline silicon film based on layer transfer, characterized in that the preparation method at least comprises the following steps:

• 1) providing a monocrystalline silicon wafer substrate, forming a mask for making a periodic silicon rod array on the monocrystalline silicon substrate, and forming the periodic silicon rod array on the monocrystalline silicon substrate by a wet chemical etching or dry etching process;
• 2) forming barrier layers on the surface of the monocrystalline silicon substrate and the surface of the silicon rods for selectively epitaxial growth of silicon;
• 3) removing the barrier layers on the heads of the rod array by a selective etching process and exposing the silicon cores on the heads of the rod array to form a silicon seed array;
• 4) growing a continuous silicon film at the top of the rod array by a chemical vapor deposition method using the exposed silicon cores as seeds for selectively epitaxial growth of silicon;
• and
• 5) lifting off the silicon film and transferring the silicon film to a preset substrate.