Non-volatile memory device and operating method thereof
AssigneeSK hynix Inc.
InventorDong Hun LEE
Life of this patent
Estimating the term…
Abstract
An operating method of a non-volatile memory device may include erasing memory cells included in a plurality of strings of a memory block, wherein the memory cells are coupled between a bit line and a common source line. The operating method of the non-volatile memory device may include performing an erase verify operation on selected memory cells having a low erase speed, among the memory cells. The operating method of the non-volatile memory device may include repeating the erasing of the memory cells and the performing of the erase verify operation until the erase verify operation passes.
Claims20
An operating method of a non-volatile memory device, the operating method comprising:
- erasing memory cells included in a plurality of strings of a memory block, wherein the memory cells are coupled between a bit line and a common source line;
- performing an erase verify operation on selected memory cells having a low erase speed, among the memory cells;
- and
- repeating the erasing of the memory cells and the performing of the erase verify operation until the erase verify operation passes.
A non-volatile memory device, comprising:
- a memory block configured for storing data;
- a circuit group configured for performing a test operation and a main erase operation on the memory block;
- a storage unit configured for storing address information about a page including slow cells;
- and
- a control circuit configured for controlling the circuit group to erase memory cells included in the memory block during the main erase operation, perform an erase verify operation on the slow cells on the basis of the address information, and perform the main erase operation until the erase verify operation passes.
Dependencies are inferred from the claim text.