Content addressable memory cells, memory arrays and methods of forming the same

A content addressable memory cell for use with a bit line, a complementary bit line, a word select line, a read/write line, a search line, a complementary search line, and a match line, the content addressable memory cell comprising:

• a first transistor comprising a first terminal coupled to the bit line, a second terminal coupled to the word select line, and a third terminal;
• a first reversible resistance-switching element comprising a first terminal coupled to the third terminal of the first transistor, and a second terminal coupled to the read/write line;
• a second transistor comprising a first terminal coupled to the complementary bit line, a second terminal coupled to the word select line, and a third terminal;
• a second reversible resistance-switching element comprising a first terminal coupled to the third terminal of the second transistor, and a second terminal coupled to the read/write line;
• a third transistor comprising a first terminal coupled to the search line, a second terminal coupled to the first terminal of the first reversible resistance-switching element and the third terminal of the first transistor, and a third terminal;
• a fourth transistor comprising a first terminal coupled to the complementary search line, a second terminal coupled to the first terminal of the second reversible resistance-switching element and the third terminal of the second transistor, and a third terminal;
• and
• a fifth transistor comprising a first terminal coupled to the match line, a second terminal coupled to the third terminal of the third transistor and the third terminal of the fourth transistor, and a third terminal coupled to GROUND.

A method of forming a content addressable memory cell, the method comprising:

• providing a plurality of transistors comprising a minimum feature size F;
• and
• providing a plurality of memory elements coupled to the plurality of transistors,
• wherein the content addressable memory cell comprises an area of between 18F2 and 36F2.